Header menu link for other important links
X
Polysilicon Technology
M. C. Ramesh, P. R.S. Rao, B. Ganhsh
Published in
1997
Volume: 43
   
Issue: 2-3
Pages: 143 - 154
Abstract
In this paper a brief review of the polycrystalline silicon technology is first presented, with particular emphasis on the Low Pressure Chemical Vapour Deposition (LPCVD) technique, and the recrystallisation and grain boundary passivation approaches. This is followed by the presentation of the detailed studies on the phosphorus diffusion into LPCVD polysilicon and the grain boundary passivation effects on the thin film transistors carried out in our laboratory. © 1997 Taylor & Francis Group, LLC.
About the journal
JournalIETE Journal of Research
ISSN03772063
Open AccessNo
Concepts (15)
  •  related image
    Chemical vapor deposition
  •  related image
    Crystallization
  •  related image
    Diffusion
  •  related image
    Grain boundaries
  •  related image
    Passivation
  •  related image
    Phosphorus
  •  related image
    Polycrystalline materials
  •  related image
    Semiconducting silicon
  •  related image
    Technology
  •  related image
    Thin film transistors
  •  related image
    DOPANT DIFFUSIVITY
  •  related image
    GRAIN BOUNDARY PASSIVATION EFFECT
  •  related image
    Low pressure chemical vapor deposition
  •  related image
    POLYSILICON TECHNOLOGY
  •  related image
    Semiconductor device manufacture