We report the formation and the role of defect dipoles in Fe doped Pb(Zr0.52Ti0.48)O3 (PZT) epitaxial thin film grown on SRO/LSAT substrate by pulsed laser deposition. The observed enhancement of spontaneous polarization in Nb-doped PZT thin film is found to be due to easy orientation and mobility of domain walls. The presence of defect complexes in Fe doped PZT film is responsible for the voltage offset or asymmetric polarization versus electric field hysteresis loop. Topography and nanoscale polarization switching of pure and doped PZT films are investigated by piezo force microscopy. X-ray photoelectron spectroscopy (XPS) study is used to confirm the presence of defect dipoles in Fe-doped PZT thin film. Detailed analysis of the XPS spectra also revealed that the defect dipoles are only formed in the Fe doped system and is absent in Nb- modified PZT thin film. © 2019 IOP Publishing Ltd.

Mamidanna Sri Ramachandra Rao

Department Of Physics

Martando Rath

Defects

Domain walls

Electric fields

hysteresis

Hysteresis loops

Iron

Lead compounds

Photoelectrons

Photons

Polarization

Pulsed laser deposition

Pulsed lasers

TITANIUM COMPOUNDS

topography

X ray photoelectron spectroscopy

Zirconium compounds

ASYMMETRIC HYSTERESIS

ASYMMETRIC POLARIZATION

DEFECT DIPOLES

ELECTRIC FIELD HYSTERESIS LOOP

NANOSCALE POLARIZATION

PIEZOFORCE MICROSCOPY

SPONTANEOUS POLARIZATIONS

X-RAY PHOTOELECTRON SPECTROSCOPY STUDIES

Thin films

IIT Madras is a public technical and research university located in Chennai, Tamil Nadu. Founded in 1959, it is recognised as an Institute of National Importance.

IIT Madras has been ranked as the top engineering institute in India for four years in a row by the National Institutional Ranking Framework of the MHRD

It currently offers undergraduate, postgraduate and research degrees across 16 disciplines in Engineering, Sciences, Humanities and Management. About 596 faculty belonging to science and engineering departments and centres of the Institute are engaged in teaching, research and industrial consultancy.

IIT Madras

Journal of Physics D: Applied Physics

Oxide electronic materials provide a plethora of possible applications and offer ample opportunity for scientists to probe into some of the exciting and intriguing phenomena exhibited by oxide systems and oxide interfaces. In addition to the already diverse spectrum of properties, the nanoscale form of oxides provides a new dimension of hitherto unknown phenomena due to the increased surface-to-volume ratio. Oxide electronic materials are becoming increasingly important in a wide range of applications including transparent electronics, optoelectronics, magnetoelectronics, photonics, spintronics, thermoelectrics, piezoelectrics, power harvesting, hydrogen storage and environmental waste management. Synthesis and fabrication of these materials, as well as processing into particular device structures to suit a specific application is still a challenge. Further, characterization of these materials to understand the tunability of their properties and the novel properties that evolve due to their nanostructured nature is another facet of the challenge. The research related to the oxide electronic field is at an impressionable stage, and this has motivated us to contribute with a roadmap on 'oxide electronic materials and oxide interfaces'. This roadmap envisages the potential applications of oxide materials in cutting edge technologies and focuses on the necessary advances required to implement these materials, including both conventional and novel techniques for the synthesis, characterization, processing and fabrication of nanostructured oxides and oxide-based devices. The contents of this roadmap will highlight the functional and correlated properties of oxides in bulk, nano, thin film, multilayer and heterostructure forms, as well as the theoretical considerations behind both present and future applications in many technologically important areas as pointed out by Venkatesan. The contributions in this roadmap span several thematic groups which are represented by the following authors: novel field effect transistors and bipolar devices by Fortunato, Grundmann, Boschker, Rao, and Rogers; energy conversion and saving by Zaban, Weidenkaff, and Murakami; new opportunities of photonics by Fompeyrine, and Zuniga-Perez; multiferroic materials including novel phenomena by Ramesh, Spaldin, Mertig, Lorenz, Srinivasan, and Prellier; and concepts for topological oxide electronics by Kawasaki, Pentcheva, and Gegenwart. Finally, Miletto Granozio presents the European action 'towards oxide-based electronics' which develops an oxide electronics roadmap with emphasis on future nonvolatile memories and the required technologies. In summary, we do hope that this oxide roadmap appears as an interesting up-to-date snapshot on one of the most exciting and active areas of solid state physics, materials science, and chemistry, which even after many years of very successful development shows in short intervals novel insights and achievements. Guest editors: M S Ramachandra Rao and Michael Lorenz. © 2016 IOP Publishing Ltd.

Fulltext

The 2016 oxide electronic materials and oxide interfaces roadmap

Modulation of oxygen vacancies assisted ferroelectric and photovoltaic properties of (Nd, V) co-doped BiFeO3 thin films

Advanced Electronic Materials

Mechanically Tunable Magnetic Properties of Flexible SrRuO3 Epitaxial Thin Films on Mica Substrates

ACS Applied Materials & Interfaces

Heat-Treatment-Induced Compositional Evolution and Magnetic State Transition in Magnetic Chalcogenide Semiconductor GeFeTe without Structural Phase Change

Origin of in Situ Domain Formation of Heavily Nb-Doped Pb(Zr,Ti)O3 Thin Films Sputtered on Ir/TiW/SiO2/Si Substrates for Mobile Sensor Applications

Origin of defect dipoles in Fe doped Pb(ZrxTi1-x)O3 thin film

Journal	Journal of Physics D: Applied Physics
Publisher	Institute of Physics Publishing
ISSN	00223727
Open Access	No