CuGaSe//2 thin films with thicknesses in the range 0. 2-0. 3 mu m were coated by flash evaporation of pre-reacted material on to glass substrates. Transmission electron microscopy studies indicated that films were single phase and polycrystalline. Optical absorption was studied in the photon energy range 1-3 eV and four characteristic energy gaps at 1. 30, 1. 68, 1. 75 and 2. 55 eV were found. Electrical conductivity measurements were carried out in the temperature range 300-500 K, and two acceptor levels with ionization energies 300 meV and 90 meV were found. From the optical absorption studies also, the ionization energy of the acceptor level was obtained as 380 meV. The effect of background absorption in determining the real absorption coefficient of the semiconductor film is also discussed.