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Multi-level programming of NOR flash EEPROMs by CHISEL mechanismPublished in
2004
Pages: 635 - 636
The performance and reliability of flash EEPROM under multilevel CHannel Initiated Secondary ELectron (CHISEL) programming operation, were analyzed. Six different bitcell doping schemes were studied and optimized doping was identified based on their program and drain-disturb performance. Isolated and fully scaled (W=0.3μm) bitcells using 0.18μm technology were used, having floating gate length of 0.2-0.26μm, tunnel oxide and IPD thickness of 12nm and 20nm respectively. Cycling induced degradation was only occurred for the erased VT and not for any of the programmed VT levels.
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About the journal
| Journal | Annual Proceedings - Reliability Physics (Symposium) |
|---|---|
| ISSN | 00999512 |
| Open Access | No |
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