Header menu link for other important links
X
Modeling of the reverse gate leakage in AlGaN/GaN high electron mobility transistors
Published in
2010
Volume: 107
   
Issue: 6
Abstract
The high gate leakage of AlGaN/GaN HEMTs grown on sapphire/SiC substrates having x=0.2, AlGaN thickness of 30 nm, and zero drain-source bias was earlier explained using the thermionic trap-assisted tunneling model. In the present work, we show that the same model can explain the gate leakage in AlGaN/GaN HEMTs grown on silicon substrates, having aluminum compositions of 24%, 26%, and 31%, AlGaN thickness of 20 nm, and drain-source bias (VDS) of 10 V, over the gate-source voltages above threshold. © 2010 American Institute of Physics.
About the journal
JournalJournal of Applied Physics
ISSN00218979
Open AccessNo
Concepts (12)
  •  related image
    ALGAN
  •  related image
    ALGAN/GAN HEMTS
  •  related image
    Algan/gan high electron mobility transistors
  •  related image
    ALUMINUM COMPOSITION
  •  related image
    Gate leakages
  •  related image
    GATE-SOURCE VOLTAGE
  •  related image
    REVERSE GATE
  •  related image
    Silicon substrates
  •  related image
    Trap assisted tunneling
  •  related image
    Electron mobility
  •  related image
    Gallium nitride
  •  related image
    High electron mobility transistors