Published in Society of Photo-Optical Instrumentation Engineers, Bellingham, WA, United States
2000
Volume: 3975
Abstract
The minority carrier lifetimes in mono crystalline silicon solar cells have been measured by short circuit current decay technique. The variation of minority carrier lifetime has been studied under various background illumination and load resistance. The results indicate that the short circuit current decay is dependent on the junction capacitance. An attempt has been made to understand the results qualitatively.