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Magnetic and transport properties of transparent SrSn0.9Sb 0.05Fe0.05O3 semiconductor films
Published in
2011
Volume: 109
   
Issue: 7
Abstract
The effect of antimony doping on the structural, magnetic, and electrical properties of transparent SrSn0.9Sb0.05Fe 0.05O3 films synthesized by RF sputtering on oxidized Si and quartz substrates has been investigated. A reduction in electrical resistivity by two orders of magnitude compared to 5 Fe doped SrSnO3 film was observed. The electrical conductivity behavior has been analyzed using the Mott's Variable range hopping model. The nature of magnetic ordering were investigated by field cooled (FC) and zero field cooled (ZFC) magnetization measurements. The applicability of models based on oxygen vacancies to explain the magnetic ordering present in the sample has been discussed. © 2011 American Institute of Physics.
About the journal
JournalJournal of Applied Physics
ISSN00218979
Open AccessNo
Concepts (20)
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    ANTIMONY DOPING
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    ELECTRICAL CONDUCTIVITY BEHAVIOR
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    Electrical property
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    Electrical resistivity
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    Fe-doped
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    Field cooled
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    Magnetic and transport properties
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    Magnetic ordering
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    Orders of magnitude
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    Quartz substrate
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    Rf-sputtering
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    SEMICONDUCTOR FILMS
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    VARIABLE RANGE HOPPING MODEL
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    ZERO-FIELD-COOLED MAGNETIZATIONS
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    Electric conductivity
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    Oxygen
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    Oxygen vacancies
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    Quartz
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    Transport properties
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    Semiconductor doping