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Low-Temperature ICP-CVD SiNx as Gate Dielectric for GaN-Based MIS-HEMTsPublished in Institute of Electrical and Electronics Engineers Inc.
2016
Volume: 63
Issue: 12
Pages: 4693 - 4701
SiNx deposited by inductively coupled plasma chemical vapor deposition (ICP-CVD) technique at low temperature (70 °C) was investigated as gate dielectric for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs). Besides significant reduction in gate leakage current, the MIS-HEMTs showed improvement in drain current characteristics, 2DEG channel mobility, ION/IOFF ratio, ON-resistance, and three terminal breakdown voltage as compared with reference HEMTs. Very small capacitance-voltage hysteresis (∼68 mV) was observed for a gate swing of -10 to +5 V. The effect of SiNx thickness (tSiNx) on the characteristics of MIS-HEMTs was studied. The performance of fabricated MIS-HEMTs was found to be stable for a wide range of temperature. © 1963-2012 IEEE.
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About the journal
| Journal | Data powered by TypesetIEEE Transactions on Electron Devices |
|---|---|
| Publisher | Data powered by TypesetInstitute of Electrical and Electronics Engineers Inc. |
| ISSN | 00189383 |
| Open Access | No |
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Concepts (26)
Capacitance- Chemical vapor deposition
- Drain current
- Electric insulators
- Gallium nitride
- Gate dielectrics
- Inductively coupled plasma
- Leakage currents
- LOW TEMPERATURE ENGINEERING
- Metal insulator boundaries
- Mis devices
- Plasma cvd
- Reconfigurable hardware
- SEMICONDUCTING ALUMINUM COMPOUNDS
- Semiconductor junctions
- Silicon nitride
- Temperature
- CAPACITANCE-VOLTAGE HYSTERESIS
- CHANNEL MOBILITY
- CURRENT CHARACTERISTIC
- Gate-leakage current
- Inductively coupled plasma chemical vapor deposition
- Low temperatures
- METAL INSULATOR SEMICONDUCTOR HIGH ELECTRON MOBILITY TRANSISTORS (MISHEMT)
- On-resistance
- High electron mobility transistors
