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Limitations of mott-schottky analysis for organic metal-insulator-semiconductor capacitors
Prashanth Kumar Manda, Karunakaran Logesh,
Published in Springer Science and Business Media, LLC
2019
Volume: 215
   
Pages: 69 - 74
Abstract
The application of Mott-Schottky (MS) relation in organic devices often leads to erroneous results. In particular, the doping density, extracted using this method found to vary with the thickness of semiconductor. We address the limitations in using MS relationship for organic metal-insulator-semiconductor (MIS) capacitors as a consequence of deviation from the depletion approximation. © Springer Nature Switzerland AG 2019.
About the journal
JournalData powered by TypesetSpringer Proceedings in Physics
PublisherData powered by TypesetSpringer Science and Business Media, LLC
ISSN09308989
Open AccessNo
Concepts (11)
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    Metal insulator boundaries
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    Mis devices
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    Organic conductors
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    Semiconductor doping
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    DEPLETION APPROXIMATION
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    DOPING DENSITIES
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    Mott-schottky
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    Mott-schottky analysis
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    ORGANIC DEVICES
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    ORGANIC METALS
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    Semiconductor insulator boundaries