The application of Mott-Schottky (MS) relation in organic devices often leads to erroneous results. In particular, the doping density, extracted using this method found to vary with the thickness of semiconductor. We address the limitations in using MS relationship for organic metal-insulator-semiconductor (MIS) capacitors as a consequence of deviation from the depletion approximation. © Springer Nature Switzerland AG 2019.

Soumya Dutta

Department of Electrical Engineering

Prashanth Kumar Manda

Karunakaran Logesh

Metal insulator boundaries

MIS devices

Organic conductors

Semiconductor doping

DEPLETION APPROXIMATION

DOPING DENSITIES

Mott-Schottky

Mott-Schottky analysis

ORGANIC DEVICES

ORGANIC METALS

Semiconductor insulator boundaries

IIT Madras is a public technical and research university located in Chennai, Tamil Nadu. Founded in 1959, it is recognised as an Institute of National Importance.

IIT Madras has been ranked as the top engineering institute in India for four years in a row by the National Institutional Ranking Framework of the MHRD

It currently offers undergraduate, postgraduate and research degrees across 16 disciplines in Engineering, Sciences, Humanities and Management. About 596 faculty belonging to science and engineering departments and centres of the Institute are engaged in teaching, research and industrial consultancy.

IIT Madras

Limitations of Mott-Schottky Analysis for Organic Metal-Insulator-Semiconductor Capacitors

Springer Proceedings in Physics

The built-in potential (Vbi) of an organic diode and solar cell is an important parameter that decides the rectification behavior of organic diodes and affects the open circuit voltage and thereby the efficiency of organic solar cells. In this paper, we propose a physics-based model and an experimental method to extract Vbi from current density-voltage(J-V) characteristics.The proposed model is developed by solving the carrier transport and the continuity equations to obtain the analytic equations for charge carrier profile and current density. The proposed method is thoroughly verified using numerical simulation results. Applicability of thismethod on experimental results is further validated for poly(3-hexylthiophene):phenyl-C61- butyric acid methyl ester solar cells. Finally,Vbi is extracted from dark J-V characteristics of fabricated devices. © 2017 IEEE.

Fulltext

IEEE Transactions on Electron Devices

Extraction of the built-in potential for organic solar cells from current-voltage characteristics

Capacitance-voltage (C-V) measurements represent a very useful;technique, however, its usage in organic devices has been a subject of;debate because of the role played by the ambient-induced unintentional;doping. In this letter, we show that, contrary to the current;understanding, prolonged ambient exposure does not significantly;increase the unintentional doping density of organic semiconductors;(OSCs). Our C-V measurements and detailed numerical simulations clearly;indicate that the observed dispersion in C-V characteristics can be;attributed to the variation in the carrier injection barrier at the;OSC/electrode interface. An analytical relation between the injection;barrier and the response time is derived to describe the C-V;characteristics of organic devices.

Ieee Electron Device Letters

Role of Injection Barrier in Capacitance-Voltage Measurements of Organic;Devices

Journal of Applied Physics

Interface states in polymer metal-insulator-semiconductor devices

Applied Physics Letters

Frequency behavior and the Mott–Schottky analysis in poly(3-hexyl thiophene) metal–insulator–semiconductor diodes

Limitations of mott-schottky analysis for organic metal-insulator-semiconductor capacitors

Journal	Data powered by TypesetSpringer Proceedings in Physics
Publisher	Data powered by TypesetSpringer Science and Business Media, LLC
ISSN	09308989
Open Access	No