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Ion bombardment measurements and simulations of a low temperature VHF PECVD SiH4–H2 discharge in the a-Si:H to μc-Si:H transition regime
K. Landheer, W.J. Goedheer, I. Poulios, R.E.I. Schropp,
Published in Wiley-VCH Verlag
2016
Volume: 213
   
Issue: 7
Pages: 1680 - 1685
Abstract
We studied ion bombardment during amorphous silicon layer deposition for hydrogen dilutions 5 to 59 with mass resolved IED measurements and simulations. The trends in the peak position of H2 + and SiHy + IEDs with increasing hydrogen dilution show good agreement between measurements and simulations. A difference in asymmetry of the discharge between simulations and measurements results in a roughly 6 eV lower peak position for the simulations. An increasing SiHy + ion flux with increasing hydrogen dilution is measured. We hypothesize that this is due to amorphous silicon etching that is enhanced by Hy + ion bombardment. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
About the journal
JournalData powered by TypesetPhysica Status Solidi (A) Applications and Materials Science
PublisherData powered by TypesetWiley-VCH Verlag
ISSN18626300