We have measured the mean inner potential depth at a Σ5 grain boundary in a SrTiO3 bicrystal by reconstructing the exit-face wave function from an image focal series collected by transmission electron microscopy. We find that, as the annealing temperature increases, the potential depth at the grain boundary exponentially increases. We interpret the temperature dependence of the potential depth as the signature of a grain-boundary thermal roughening transition. © 2015, Springer Science+Business Media New York.

Somnath Bhattacharyya

Department of Metallurgical and Materials Engineering

Piu Rajak

Sung Bo Lee

High resolution transmission electron microscopy

Strontium alloys

Strontium titanates

Temperature distribution

Transmission electron microscopy

Wave functions

Annealing temperatures

MEAN INNER POTENTIAL

SrTiO

temperature dependence

THERMAL ROUGHENING

Grain boundaries

IIT Madras is a public technical and research university located in Chennai, Tamil Nadu. Founded in 1959, it is recognised as an Institute of National Importance.

IIT Madras has been ranked as the top engineering institute in India for four years in a row by the National Institutional Ranking Framework of the MHRD

It currently offers undergraduate, postgraduate and research degrees across 16 disciplines in Engineering, Sciences, Humanities and Management. About 596 faculty belonging to science and engineering departments and centres of the Institute are engaged in teaching, research and industrial consultancy.

IIT Madras

Journal of Materials Science

Dynamical behavior of intergranular glassy films (IGFs) in undoped and Lu2O3– MgO doped Si3N4 ceramics was studied by reconstructing complex-valued exit wave using focal series bright field images acquired at different temperatures during heating in-situ within transmission electron microscope (TEM). Width and value of retrieved phase change of the complex-valued exit wave across the IGFs were used to study changes that occur during in–situ heating until 950 °C. Results revealed that the IGF of an undoped sample maintains its equilibrium configuration. In the case of doped one, the phase difference between adjacent grains with IGF decreases but at the same time width of IGF increases during in-situ heating. Collectively, these two trends are indicative of the change in the mean inner potential of IGF during heating which in turn reveals that IGF in Lu2O3– MgO doped Si3N4 does not maintain equilibrium configuration. Mean inner potential differences between IGF and adjacent grain of doped samples at room temperature exhibit a higher value than that of the undoped one due to rare earth element segregation within IGF. This might be the cause of the difference in the dynamical behavior of IGFs observed in the present study. © 2019 Elsevier B.V.

Journal of Alloys and Compounds

Unravelling dynamical behavior of intergranular glassy films in Si3N4 ceramics during in-situ heating: Exit wave reconstruction insights

Materials Letters

Direct evidence of intercalation in a topological insulator turned superconductor

Microscopy and Microanalysis

Structure and Chemistry across Interfaces at Nanoscale of a Ge Quantum Well Embedded within Rare Earth Oxide Layers

Microscopy Research and Technique

Retrieval of absorptive potential variation in electron beam sensitive specimens using a single energy-filtered bright-field TEM image

Ultramicroscopy

A flux-preserving non-linear inline holography reconstruction algorithm for partially coherent electrons

Advanced Materials

High-Temperature Resistance Anomaly at a Strontium Titanate Grain Boundary and Its Correlation with the Grain-Boundary Faceting–Defaceting Transition

Indication of thermal roughening in the retrieved mean inner potential across a Σ5 grain boundary in SrTiO3 annealed at different temperatures

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