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In situ electrical conductivity and the amorphous-crystalline transition in vacuum deposited thin films of Se80Te20 alloy
V. Damodara das, P. Jansi Lakshmi
Published in Kluwer Academic Publishers
1987
Volume: 22
   
Issue: 7
Pages: 2377 - 2381
Abstract
The electrical conductivity of thin films of Se80Te20 polycrystalline alloy vacuum-deposited at room temperature on glass substrates has been studied during in situ heating and cooling cycles. From the electron diffraction of as-grown films it is seen that the studied films are amorphous at room temperature. The electrical conductivity and electron diffraction studies showed that the as-grown amorphous thin films undergo an amorphous-crystalline transition in the temperature range 340 to 360 K. Upon cooling, the films appear to undergo a crystalline crystalline transition around the same temperatures. There does not appear to be any dependence of the amorphous-crystalline transition temperature on the thickness of the films. However, high-resistance films (thinner films) have a well-defined transition temperature while the low-resistance films (thicker films) have a broader transition. The electrical conductivity of polycrystalline Se80Te20 films above 360 K appears to be an exponential function of reciprocal temperature. © 1987 Chapman and Hall Ltd.
About the journal
JournalJournal of Materials Science
PublisherKluwer Academic Publishers
ISSN00222461
Open AccessNo
Concepts (5)
  •  related image
    Glass, metallic - crystallization
  •  related image
    SEMICONDUCTING FILMS - ELECTRIC CONDUCTIVITY
  •  related image
    AMORPHOUS-CRYSTALLINE TRANSITION
  •  related image
    VACUUM DEPOSITED THIN FILMS
  •  related image
    SELENIUM TELLURIUM ALLOYS