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Impact of Source/Drain Underlap on the Ballistic Performance of Silicon and Germanium-Tin Nanowire p-MOSFETsPublished in Institute of Electrical and Electronics Engineers Inc.
2020
We investigate the effectiveness of source/drain (S/D) underlap regions in limiting the source to drain tunneling (SDT) current in Si and Ge0.96Sn0.04nanowire MOSFETs (NWFETs), using rigorous ballistic quantum transport simulations. Our simulation results indicate that with a carefully chosen length of S/D underlap regions, GeSn p-NWFETs can outperform Si p-NWFETs, despite having a higher component of SDT current in OFF-state. © 2020 IEEE.
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About the journal
| Journal | Data powered by Typeset4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings |
|---|---|
| Publisher | Data powered by TypesetInstitute of Electrical and Electronics Engineers Inc. |
| Open Access | No |
Authors (1)
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