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High pressure oxidation of Si(100) for production of ultrathin oxide metal-insulator-semiconductor diodes
Published in
1988
Volume: 156
   
Issue: 2
Pages: 243 - 258
Abstract
It is shown here that ultrathin oxides can be grown with excellent control by a low temperature, high pressure oxidation process. The I-V characteristics of tunneling metal-insulator-semiconductor diodes fabricated using this process demonstrate that the interface state density can be reduced by an order of magnitude compared with low temperature, atmospheric pressure oxidation. © 1988.
About the journal
JournalThin Solid Films
ISSN00406090
Open AccessNo
Concepts (5)
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    SEMICONDUCTOR DEVICES, MIS
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    Semiconductor diodes
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    I-v characteristics
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    ULTRATHIN OXIDES
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    Semiconducting silicon