It is shown here that ultrathin oxides can be grown with excellent control by a low temperature, high pressure oxidation process. The I-V characteristics of tunneling metal-insulator-semiconductor diodes fabricated using this process demonstrate that the interface state density can be reduced by an order of magnitude compared with low temperature, atmospheric pressure oxidation. © 1988.

Nandita Dasgupta

Department of Electrical Engineering

SEMICONDUCTOR DEVICES, MIS

Semiconductor diodes

I-V characteristics

ULTRATHIN OXIDES

Semiconducting silicon

IIT Madras is a public technical and research university located in Chennai, Tamil Nadu. Founded in 1959, it is recognised as an Institute of National Importance.

IIT Madras has been ranked as the top engineering institute in India for four years in a row by the National Institutional Ranking Framework of the MHRD

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IIT Madras

High pressure oxidation of Si(100) for production of ultrathin oxide metal-insulator-semiconductor diodes

Thin Solid Films

Tunnel oxide (SiOx) films, about 20 AA in thickness, were grown on (100) and (111) oriented, 10 Omega cm, p-type silicon wafers at a temperature of 250 degrees C, and pressure of 2 atm in dry oxygen ambient. The SiO x films were characterized using AlSiOx/p-Si MIS diodes with semi-transparent metal electrodes, by variable illumination current-voltage technique. The open-circuit voltage, short-circuit current, ideality factor and reverse saturation current were studied as functions of oxidation time and were found to be in accordance with a reduction of the interface state density with the oxide growth. From the experimental n-values the interface state densities were calculated and were found to be of the order of 1012 cm -2 eV-1 for both orientations. The reverse saturation current density obtained was of the order of 10-7 A cm-2 for (111) oriented substrates and 10-8 A cm-2 for the (100) orientation. The order of the oxide fixed charge was computed using deviation in the experimental barrier height from the theoretical barrier height (assuming no fixed charges are present). This was found to be of the order of 1012 cm-2 in both cases.

Semiconductor Science and Technology

Tunnel oxides in AlSiOx/p-Si diodes by high pressure, low temperature oxidation of Si(100) and Si(111)

Ultra thin tunnel oxides(SiOx) were grown on silicon, pretreated with 5% hydrofluoric acid, using high pressure low temperature oxidation. These oxides were characterised using variable illumination current-voltage (Voc - Jsc) measurements on semi-transparent metal gate MIS diodes. The open circuit voltage (Voc), short circuit current (Jsc), ideality factor (n) and reverse saturation current (Jo) are studied as a function of oxidation time. The interface state density Dits for the HF treated sample was found to decrease from 2 × 1012 cm-2eV-1 to 9.21 × 1011 cm-2eV-1. Highly reproducible good quality ultra thin oxides were obtained by pre-treatment of the wafer in hydrofluoric acid. © 1992 SPIE. All rights reserved.

Proceedings of SPIE - The International Society for Optical Engineering

Ultra thin oxide (SiOx) grown on HF treated silicon

Ultra-thin tunnel oxides(SiOx) were grown on silicon, pretreated with 5% hydrofluoric acid, using high-pressure low-temperature oxidation. These oxides were characterized using variable illumination current-voltage measurements on semi-transparent metal gate metal-insulator-semiconductor diodes. The open-circuit voltage, short-circuit current, ideality factor and reverse saturation current are studied as a function of oxidation time. The interface state density for the HF-treated sample was found to decrease from 2.0×1012cm-2eV-1 to 9.0×1011cm-2eV-1. The HF-treated wafers and those which were not treated were studied with X-ray photoelectron spectroscopy. The treated surfaces were found to contain fluorine in the region of 3-5 ×1013 atoms cm-2 and free of the native oxide layer. Highly reproducible good-quality ultra-thin oxides were obtained by pre-oxidation treatment of the wafer in hydrofluoric acid. It is also seen that the HF treatment induces a negative charge in the oxide grown. © 1991.

Effect of pre-oxidation HF treatment on the tunnel oxide (SiOx) grown at high pressure

Journal of the Electrochemical Society

Studies on Evaporated Indium Tin Oxide (ITO)/Silicon Junctions and an Estimation of ITO Work Function

Analytical Proceedings

Reports of meetings

Journal of Applied Physics

Electrostatic effects of interface states on carrier transport in semiconductor heterojunctions

Journal	Thin Solid Films
ISSN	00406090
Open Access	No