Diffusion of radioactive phosphorus in polycrystalline silicon has been studied in the temperature range 566-980 degrees C. Diffusion profiles were obtained by anodic oxidation sectioning coupled with radio tracer detection. Diffusion coefficients in the grain boundary were obtained following Leclaire's method of analysis. An Arrhenius plot of grain boundary diffusion coefficients gave rise to an activation energy of 2.65 eV and pre-exponential factor D' 0=4.8*10-3 cm2 s-1.

M. R. Murti

IIT Madras is a public technical and research university located in Chennai, Tamil Nadu. Founded in 1959, it is recognised as an Institute of National Importance.

IIT Madras has been ranked as the top engineering institute in India for four years in a row by the National Institutional Ranking Framework of the MHRD

It currently offers undergraduate, postgraduate and research degrees across 16 disciplines in Engineering, Sciences, Humanities and Management. About 596 faculty belonging to science and engineering departments and centres of the Institute are engaged in teaching, research and industrial consultancy.

IIT Madras

Grain boundary diffusion of phosphorus in polycrystalline silicon

Semiconductor Science and Technology

Diffusion of phosphorus in polycrystalline silicon is carried out from POCl3 source at 1000°C for 1 hour. The diffusion profiles were obtained and were analysed to get diffusivity as a function of concentration. © 1992 SPIE. All rights reserved.

Proceedings of SPIE - The International Society for Optical Engineering

Concentration dependence of diflfusivity in polysilicon

Journal of Applied Physics

Phosphorus diffusion in polycrystalline silicon

Thin Solid Films

Diffusion characteristics of boron and phosphorus in polycrystalline silicon

Fundamentals of Solar Cells

JUNCTIONS

IEEE Transactions on Electron Devices

Effects of grain boundaries on the current-voltage characteristics of polycrystalline silicon solar cells

Applied Physics Letters

Hall mobility of polycrystalline silicon

Journal	Semiconductor Science and Technology
ISSN	02681242
Open Access	No