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Gate Leakage Mechanisms in AlInN/GaN and AlGaN/GaN MIS-HEMTs and Its Modeling
Published in Institute of Electrical and Electronics Engineers Inc.
2017
Volume: 64
   
Issue: 9
Pages: 3609 - 3615
Abstract
Gate leakage mechanisms in AlInN/GaN and AlGaN/GaN metal insulator semiconductor high-electron-mobility transistors (MIS-HEMTs) with SiNx as gate dielectric have been investigated. It is found that the conduction in the reverse gate bias is due to Poole-Frenkel emission for both MIS-HEMTs. The dominant conduction mechanism in low to medium forward bias is trap-assisted tunneling while it is Fowler-Nordheim tunneling at high forward bias. However, conduction near zero gate bias is dominated by defect-assisted tunneling for both sets of MIS-HEMTs. The gate leakage current is primarily dependent on the properties of the gate dielectric material and dielectric/semiconductor interface rather than the barrier layer. A model is proposed for the gate leakage current in GaN-based MIS-HEMTs, and the method to extract the related model parameters is also presented in this paper. The proposed gate current model matches well with the experimental results for both AlInN/GaN and AlGaN/GaN MIS-HEMTs over a wide range of gate bias and measurement temperature. © 1963-2012 IEEE.
About the journal
JournalData powered by TypesetIEEE Transactions on Electron Devices
PublisherData powered by TypesetInstitute of Electrical and Electronics Engineers Inc.
ISSN00189383
Open AccessNo
Concepts (20)
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    Aluminum alloys
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    Dielectric materials
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    Electron mobility
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    Gallium alloys
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    Gallium nitride
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    Gate dielectrics
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    Iii-v semiconductors
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    Indium alloys
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    Interfaces (materials)
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    Leakage currents
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    Metal insulator boundaries
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    Mis devices
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    Semiconductor insulator boundaries
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    Transistors
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    Algan/gan
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    ALINN/GAN
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    Gate leakages
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    Gate-leakage current
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    METAL INSULATOR SEMICONDUCTOR HIGH ELECTRON MOBILITY TRANSISTORS (MISHEMT)
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    High electron mobility transistors