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Gate Current Partitioning Model for Schottky Gate GaN HEMTs
, , Debnath A., Pandurang K.R.
Published in IEEE
Volume: 68
Issue: 1
Pages: 425 - 429
A gate current partition scheme for Schottky gate GaN-based high-electron-mobility transistors (HEMTs) using a charge-based approach is proposed. Analytical expressions for gate-to-drain and gate-to-source components of Fowler-Nordheim tunneling (FNT), Poole-Frenkel emission (PFE), thermionic emission (TE), and defect assisted tunneling (DAT) currents are derived. This current partition model is implemented in Verilog-A and validated with experimental results for a wide range of gate and drain bias. The model also passes the symmetry test. © 1963-2012 IEEE.
About the journal
JournalData powered by TypesetIEEE Transactions on Electron Devices
PublisherData powered by TypesetIEEE
Open AccessNo