Suspended Gate Field Effect Transistor (SGFET) with lower subthreshold swing (S) can overcome high power dissipation during switching events. An electrostatic actuator, which is the fundamental building block of SGFET is fabricated using surface micromachining technique. Using a series feedback capacitor, the actuator was stabilized beyond the pull-in instability limit. The presence of negative differential capacitance is demonstrated by the voltage amplification method, which reduces the body factor (m) value less than 1. © 2016 IEEE.