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Experimental and theoretical investigation of thermodynamic and transport phenomena in polysilicon and silicon nitride CVD
Published in
2009
Volume: 19
   
Issue: 23
Pages: 53 - 68
Abstract
The performance of chemical vapor deposition (CVD) reactors is strongly dependent on fluid flow, heat transport and mass transport. In this work, the deposition of polysilicon in a LPCVD batch reactor is modeled by using the local thermochemical equilibrium approach coupled with transport effects. The focus is on understanding how the interplay of flow and kinetic factors influences deposition in a CVD reactor. Experiments were conducted to study the effect of temperature on deposition rate. Comparisons between the modeling and experimental results were used to obtain an insight into the parameters affecting deposition. PECVD reactors are being increasingly used in the industry for carrying out deposition at low temperatures. A review is presented of the challenges faced in PECVD modeling and the approaches that could be followed. An empirical model for PECVD deposition of silicon nitride deposition is also presented. ©The Electrochemical Society.
About the journal
JournalECS Transactions
ISSN19385862
Open AccessNo
Concepts (21)
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    CHEMICAL VAPOR DEPOSITION REACTORS
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    CVD REACTORS
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    Effect of temperature
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    Empirical model
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    Fluid flow
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    HEAT TRANSPORT
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    KINETIC FACTORS
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    Low temperatures
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    Mass transport
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    Silicon nitride deposition
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    Theoretical investigations
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    THERMOCHEMICAL EQUILIBRIUM
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    Transport phenomena
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    Batch reactors
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    Coupled circuits
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    Deposition
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    Flow of fluids
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    Polysilicon
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    Silicon nitride
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    Transport properties
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    Chemical vapor deposition