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Evidence of weak antilocalization in quantum interference effects of (001) oriented La0.7Sr0.3MnO3-SrRuO3superlattices
R. Sobhanan Helen, W. Prellier,
Published in American Institute of Physics Inc.
Volume: 128
Issue: 3
Quantum corrections to conductivity in the ferromagnetic La0.7Sr0.3MnO3 (LSMO) and SrRuO3 (SRO) thin films depend on the structural mismatches and interfaces accommodating ions and their spins. Here, by making interfaces of LSMO and SRO in the form of artificial superlattices, we achieve positive magnetoresistance (MR) and weak antilocalization (WAL), although the individual component shows negative MR and weak localization (WL). The [20 unit cell (u.c.) LSMO/3 u.c. SRO]×15 superlattice stabilizes in tetragonal symmetry associated with the rhombohedral and orthorhombic structures and demonstrates the occurrence of the single magnon scattering process. The low-field MR of the superlattice fit to the Hikami-Larkin-Nagaoka expression yields 595 Å phase coherence length (lφ) with WAL of carriers. As the SRO layer thickness in the superlattice increases to 5 u.c., the value of lφ = 292 Å decreases, and positive MR increases confirm the manifestation of WAL by SRO. The orthorhombic symmetry of the SRO is preserved in the [20 u.c. SRO/3 u.c. LSMO]×15 superlattice, which shows the existence of locally cooperative bond-length fluctuations and conduction due to the scattering of the electron by the Fermi liquid electrons, bond length, and spin fluctuations. However, as the LSMO layer thickness in the superlattice is increased to 5 u.c., the WL effect suppresses WAL at the low field. The spin-orbit coupling associated with magnetic anisotropy, i.e., spin and bond length fluctuations, modifies the WL in the superlattices and leads to WAL, thereby achieving positive MR. © 2020 Author(s).
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JournalData powered by TypesetJournal of Applied Physics
PublisherData powered by TypesetAmerican Institute of Physics Inc.