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Evidence of quantum correction to conductivity and variable range hopping conduction in nano-crystalline Cu3N thin film
Guruprasad Sahoo,
Published in American Institute of Physics Inc.
2015
Volume: 5
   
Issue: 10
Abstract
We have investigated the temperature dependent carrier transport properties of nano-crystalline copper nitride thin films synthesized by modified activated reactive evaporation. The films, prepared in a Cu-rich growth condition are found to be highly disordered and the carrier transport in these films is mainly attributed to the impurity band conduction. We have observed that no single conduction mechanism is appropriate to elucidate the carrier transport in the entire temperature range of 20 - 300 K. Therefore, we have employed different conduction mechanisms in different temperature regimes. The carrier transport of the films in the low temperature regime (20 - 150 K) has been interpreted by implementing quantum correction to the conductivity. In the high temperature regime (200 - 300 K), the conduction mechanism has been successfully analyzed on the basis of Mott's variable range hopping mechanism. Furthermore, it can be predicted that copper ions present at the surface of the crystallites are responsible for the hopping conduction mechanism. � 2015 Author(s).
About the journal
JournalData powered by TypesetAIP Advances
PublisherData powered by TypesetAmerican Institute of Physics Inc.
ISSN21583226
Open AccessNo
Concepts (15)
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    Carrier transport
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    Copper
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    Crystalline materials
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    Metal ions
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    Quantum chemistry
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    Temperature
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    COPPER NITRIDE THIN FILMS
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    HIGH-TEMPERATURE REGIME
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    IMPURITY BAND CONDUCTION
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    Low-temperature regime
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    MODIFIED ACTIVATED REACTIVE EVAPORATION
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    Temperature dependent
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    Variable range hopping
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    VARIABLE-RANGE HOPPING CONDUCTION
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    Thin films