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Erratum: Work function tuning and improved gate dielectric reliability with multilayer graphene as a gate electrode for metal oxide semiconductor field effect device applications (Applied Physics Letters (2012) 100 (233506))Published in
2012
DOI: 10.1063/1.4754145
Volume: 101
Issue: 12
Important typographic error in the last paragraph of page 4, in the line “Ti-N has a bond length of about 1.57 Å and Ti and N have atomic diameters of 2.84 nm and 1.36 nm, respectively” is identified. In this line, Ti and N atomic diameters are written in nanometers, while the units should be in Angstroms. These changes in the units of atomic diameter would not affect the conclusions of the paper.1
The authors would like to tender an apology for the mistake.
Topics: Gate oxide (70)%70% related to the paper, Gate dielectric (69)%69% related to the paper, Reliability (semiconductor) (54)%54% related to the paper, Graphene (53)%53% related to the paper and Field effect (53)%53% related to the paper
Publisher Copy Version
Content may be subject to copyright.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publ... ...This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in [Erratum: “Work function tuning and improved gate dielectric reliability with multilayer graphene as a gate electrode for metal oxide semiconductor field effect device applications” [Appl. Phys. Lett. 100, 233506 (2012)]. Applied Physics Letters 101, 12 p129902 (2012)] and may be found at https://doi.org/10.1063/1.4754145.
About the journal
| Journal | Applied Physics Letters |
|---|---|
| ISSN | 00036951 |
Authors (1)
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