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Electrical properties of reactive-ion-sputtered Al2O3 on 4H-SiC
Madhup Shukla, Gourab Dutta,
Published in Elsevier B.V.
2016
Volume: 607
   
Pages: 1 - 6
Abstract
Al2O3 was deposited on n-type 4H-SiC by reactive-ion-sputtering (RIS) at room temperature using aluminum target and oxygen as a reactant gas. Post deposition oxygen annealing was carried out at a temperature of 1100 °C. Metal-oxide-semiconductor (MOS) test structures were fabricated on 4H-SiC using RIS-Al2O3 as gate dielectric. The C-V characteristics reveal a significant reduction in flat band voltage for oxygen annealed RIS-Al2O3 samples (Vfb = 1.95 V) compared to as-deposited Al2O3 samples (Vfb > 10 V), suggesting a reduction in negative oxide charge after oxygen annealing. Oxygen annealed RIS-Al2O3 samples also showed significant improvement in I-V characteristics compared to as-deposited RIS-Al2O3 samples. A systematic analysis was carried out to investigate the leakage current mechanisms present in oxygen annealed RIS-Al2O3 on 4H-SiC at higher gate electric field and at different operating temperature. For measurement temperature (T) < 303 K, Fowler-Nordheim (FN) tunneling was found to be the dominant leakage mechanism and for higher temperature (T ≥ 303 K), a combination of FN tunneling and Poole-Frenkel (PF) emission was confirmed. The improvement in I-V characteristics of oxygen annealed RIS-Al2O3/4H-SiC MOS devices is attributed to large effective barrier height (ΦB = 2.53 eV) at Al2O3/SiC interface, due to the formation of an interfacial SiO2 layer during oxygen annealing, as confirmed from X-ray Photoelectron Spectroscopy results. Further improvement in C-V characteristics for oxygen annealed RIS-Al2O3/4H-SiC MOS devices was observed after forming gas annealing at 400 °C. © 2016 Elsevier B.V. All rights reserved.
About the journal
JournalData powered by TypesetThin Solid Films
PublisherData powered by TypesetElsevier B.V.
ISSN00406090
Open AccessNo
Concepts (30)
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    Aluminum coatings
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    Annealing
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    Charge coupled devices
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    Dielectric devices
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    Electric fields
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    Field emission
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    Flash memory
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    Gate dielectrics
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    Interlocking signals
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    Ions
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    Metal analysis
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    Metallic compounds
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    Metals
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    Mos capacitors
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    Mos devices
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    Oxide semiconductors
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    Oxygen
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    Reconfigurable hardware
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    Silicon carbide
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    Transistors
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    Wide band gap semiconductors
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    X ray photoelectron spectroscopy
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    4H-SIC
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    ALUMINUM OXIDES
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    FORMING GAS ANNEALING
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    Metal-oxide-semiconductor capacitors
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    OXYGEN ANNEALING
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    Poole-frenkel
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    REACTIVE ION
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    Aluminum