Finely powdered, pre-reacted, polycrystalline CuInSe//2 was flash evaporated onto glass substrates. The thin films obtained in this manner were characterized by Transmission Electron Microscopy (TEM). The optical absorption of the films was studied in the spectral range 700-1300 nm and analyzed. The effect of the background absorption on the absorption spectrum is discussed. From this analysis, the band-gap of CuInSe//2 is found to be 1. 02 plus or minus 0. 01 ev. All films deposited were of p-type. The electrical conductivity of the films was measured in the temperature range 77-550 K by four-probe technique with indium pressure contacts. The activation energy of 100 mev obtained at high temperature is attributed to acceptor copper vacancies.