The flash evaporation technique produces thin films of stoichiometric CuInTe2. From an analysis of the optical absorption spectra of the thin films, the band gap of CuInTe2 is found to be 1.03 eV. The effect of the background absorption on the absorption spectrum is found to be negligible. The electrical conductivity of these films is limited by hopping conduction in the temperature range 77-200 K. Acceptor levels at 100 meV above the valence band maximum were observed and attributed to copper vacancies. © 1986.

D. Sridevi

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IIT Madras

Electrical conductivity and optical absorption in flash-evaporated CuInTe2 thin films

Thin Solid Films

Thin films of CuInSe2 have been evaporated onto glass substrates by flash evaporation. The as-deposited films are amorphous and annealing in selenium atmosphere produces polycrystalline films. The films were characterized by tem and x-ray diffraction techniques. The optical absorption of the films shows three energy gaps of 1·03, 1·07 and 1·22 eV. The crystal field and spin-orbit splitting are thus found to be 0·04 eV and 0·16 eV respectively. The percentage d-character of the valence band states is ∼35%. The Arrhenius plot of electrical conductivity of films showed impurity ionization of EA = 75 meV. © 1986 the Indian Academy of Sciences.

Fulltext

Bulletin of Materials Science

Preparation and characterization of flash-evaporated CuInSe2 thin films

The solid solutions CuInSe2(1-x)Te2x, 0≦x≦1 have been prepared by melting stoichiometric mixtures of constituent elements. They have been characterised by conventional X-ray diffraction techniques and by Electron Probe Microanalysis. The compounds CuInSe2 and CuInTe2 are miscible in all proportions. The solid solutions solidify in the chalcopyrite structure throughout the composition range. The lattice parameters a and c vary parabolically with the composition variable x. © 1985.

Journal	Thin Solid Films
ISSN	00406090
Open Access	No