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Electrical characterization of metal-insulator-semiconductor capacitors with xerogel as dielectricPublished in
2002
DOI: 10.1063/1.1458065
Volume: 80
Issue: 10
Pages: 1800 - 1802
Xerogel films have been prepared on p-type silicon (pSi) substrates by the sol-gel process using hexamethyldisilazane for surface modification. The dielectric constants of the films are in the range of 1.9-2.5. Detailed electrical characterization has been carried out using an aluminum-xerogel-pSi metal-insulator-semiconductor structure. Low values of fixed oxide charges, mobile oxide charges, and interface state densities have been obtained. The low leakage current density and high breakdown field strength of these films make them suitable for intermetal isolation. Very little degradation of the film properties was observed even after 40 days without any capping layer. © 2002 American Institute of Physics.
Topics: Dielectric (57)%57% related to the paper, Oxide (52)%52% related to the paper, Capacitor (52)%52% related to the paper, Silicon (52)%52% related to the paper and Permittivity (51)%51% related to the paper
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Content may be subject to copyright.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publ... ...This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in [Electrical characterization of metal–insulator–semiconductor capacitors with xerogel as dielectric. Applied Physics Letters 80, 10 p1800-1802 (2002)] and may be found at https://doi.org/10.1063/1.1458065.
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About the journal
| Journal | Applied Physics Letters |
|---|---|
| ISSN | 00036951 |
| Open Access | No |
Authors (3)
A Subrahmanyam- Electrical and optical properties of reactively evaporated indium tin oxide (ITO) films-dependence on substrate temperature and tin concentration
- Silver oxide (AgO) thin films for Surface Enhanced Raman Scattering (SERS) studies
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- Thermal evaporated Copper Iodide (CuI) thin films: A note on the disorder evaluated through the temperature dependent electrical properties
Nandita Dasgupta- Electrical and reliability characteristics of MOS devices with ultrathin SiO2 grown in nitric acid solutions
- Enhanced photoluminescence and heterojunction characteristics of pulsed laser deposited ZnO nanostructures
- Zn-vacancy induced violet emission in p-type phosphorus and nitrogen codoped ZnO thin films grown by pulsed laser deposition
- A continuous analytical model for 2-deg charge density in Algan/Gan hemts valid for all bias voltages
Amitava Dasgupta- Electrical and reliability characteristics of MOS devices with ultrathin SiO2 grown in nitric acid solutions
- Fabrication of reliable RF MEMS switches in CPW configuration
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Concepts (19)
Capping layer- Dielectric constants
- Electrical characterization
- FILM PROPERTIES
- HEXAMETHYLDISILAZANE
- HIGH BREAKDOWN FIELDS
- Interface state density
- Low-leakage current
- METAL INSULATOR SEMICONDUCTOR CAPACITORS
- Metal insulator semiconductor structures
- OXIDE CHARGE
- P-TYPE SILICON
- XEROGEL FILMS
- Metal insulator boundaries
- Mis devices
- Semiconducting silicon
- Sol-gel process
- Xerogels
- Semiconductor insulator boundaries
