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Effect of recessed electrodes on contact resistance in organic thin film transistor based on polymer dielectric
, Imroze F., Mithun C.A., Logesh K.,
Published in Institute of Electrical and Electronics Engineers Inc.
Volume: 2020-June
Even though there has been a significant progress in organic thin film transistor (OTFT), one of the major limitations that hinders the device performance is contact effect at the junction of semiconductor and source-drain contacts The effect becomes more effective while scaling down the channel length resulting in apparent mobility reduction, hysteresis etc. [1]. Efforts have been made to reduce contact resistance through the reduction of the metal-semiconductor injection barrier by either metal work function modification or by introducing a carrier injecting buffer layer. In this work, recessed drain-source structure on solution-processed polymer gate dielectric is demonstrated to realize bottom gate bottom contact (BGBC) OTFT based on poly[2, 5-bis(3-tetradecylthiophen-2-yl)thieno[3, 2- b]thiophene](PBTTT-C14) as semiconductor. © 2020 IEEE.
About the journal
JournalData powered by TypesetDevice Research Conference - Conference Digest, DRC
PublisherData powered by TypesetInstitute of Electrical and Electronics Engineers Inc.
Open AccessNo