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Effect of pre-oxidation cleaning on the characteristics of Al-thin SiO2-Si tunnel diodes prepared by low temperature, low pressure wet oxidation
Bhat Vishwanath Krishna, A. Subrahamanyam
Published in SPIE, Bellingham, WA, United States
Volume: 3316
Issue: 1
Pages: 599 - 602
The effect of pre-oxidation cleaning of silicon surface on the characteristics of Al-thin SiO2-Si tunnel diodes with thin SiO2 (<3 nm) grown by low temperature and low pressure wet oxidation has been reported. The surface of silicon single crystal wafer has been prepared employing three cleaning methods: i) Normal cleaning, ii) Chemical polishing and iii) Stripping of thick oxide. Wet oxidation has been carried out at a temperature of 600 °C, 0.30 atmosphere partial pressure of water vapour for 30 minutes. Al-thin SiO2-Si diodes have been fabricated and the electrical characteristics of these diodes have been studied in detail. The results indicate that the ultrathin oxides grown by `Stripping of thick oxide' method gives more uniformity of the grown oxide.
About the journal
JournalData powered by TypesetProceedings of SPIE - The International Society for Optical Engineering
PublisherData powered by TypesetSPIE, Bellingham, WA, United States
Open AccessNo
Concepts (12)
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    Partial pressure
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    Semiconductor device manufacture
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    Semiconductor growth
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    Silicon wafers
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    Single crystals
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    Surface cleaning
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    Water vapour
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    Tunnel diodes