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Effect of oxygen adsorption on the electrical resistance of Pb0.8Sn0.2Te thin films
C. Bahulayan, V. Damodara das
Published in
1996
Volume: 11
   
Issue: 5
Pages: 753 - 758
Abstract
Thin films of Pb0.8Sn0.2Te of varying thicknesses deposited by the flash evaporation method showed considerable change in resistance with time when exposed to oxygen or atmosphere. The change in resistance is found to decrease with increase in thickness and with increase in substrate temperature. The observed behaviour is explained by an oxygen adsorption model, which is further supported by the x-ray photoelectron spectroscopy (XPS) of the films.
About the journal
JournalSemiconductor Science and Technology
ISSN02681242
Open AccessNo
Concepts (16)
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    Adsorption
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    Characterization
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    Deposition
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    Electric resistance
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    Oxygen
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    Semiconducting lead compounds
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    Substrates
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    Surfaces
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    Thermal effects
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    Transmission electron microscopy
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    X ray crystallography
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    X ray photoelectron spectroscopy
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    FLASH EVAPORATION METHOD
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    LEAD TIN TELLURIUM
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    OXYGEN ADSORPTION MODEL
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    Thin films