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Effect of lanthanum doping in ceria abrasives on chemical mechanical polishing selectivity for shallow trench isolation
B. V.S. Praveen,
Published in Elsevier Ltd
2015
Volume: 33
   
Pages: 161 - 168
Abstract
Amino acids, when used with ceria based slurries, yield high selectivity in shallow trench isolation chemical mechanical polishing (CMP). However, the presence of impurities in the abrasives also plays a role in determining the selectivity. Experiments were performed with two different ceria abrasives, one with high purity and the other with controlled lanthanum doping. Various amino acids were evaluated in order to identify the nature of interaction between the additives and the abrasives. The abrasives were further characterized using transmission electron microscopy, X-ray diffraction and X-ray photo-electron spectroscopy. The removal rate results show that glycine and proline are sensitive to the La doping in the ceria abrasive whereas the other amino acids studied suppress the nitride removal irrespective of the purity of the abrasives. Thermo-gravimetric analysis shows that the extent of adsorption of glycine or proline on ceria depends on the presence of La doping, whereas the other amino acids adsorb equally well on ceria abrasives with or without La doping. © 2015 Elsevier Ltd. All rights reserved.
About the journal
JournalData powered by TypesetMaterials Science in Semiconductor Processing
PublisherData powered by TypesetElsevier Ltd
ISSN13698001
Open AccessNo
Concepts (21)
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    Abrasives
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    Amino acids
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    CERIUM COMPOUNDS
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    CHEMICAL POLISHING
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    Electron spectroscopy
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    Gravimetric analysis
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    Lanthanum
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    Polishing
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    Semiconducting silicon
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    Thermogravimetric analysis
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    Transmission electron microscopy
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    X ray diffraction
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    CHEMICAL MECHANICAL POLISHING(CMP)
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    HIGH PURITY
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    High selectivity
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    Impurities in
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    LA DOPING
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    Lanthanum doping
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    REMOVAL RATE
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    SHALLOW TRENCH ISOLATION
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    CHEMICAL MECHANICAL POLISHING