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Effect of germanium preamorphization implant on performance and gate-induced drain leakage in SiGe channel pFET
Published in Institute of Electrical and Electronics Engineers Inc.
2015
Volume: 36
   
Issue: 6
Pages: 531 - 533
Abstract
Silicon-germanium (SiGe) channel pMOSFET is considered as a replacement for silicon channel device for 32-nm node and beyond, because of its lower threshold voltage and higher channel mobility. Lower SiGe bandgap makes gate-induced drain leakage (GIDL) important for low leakage, high threshold voltage device designs. In this letter, the effect of prehalo/LDD Ge preamorphization implant (PAI) on GIDL and performance is investigated using experimental data and simulations. Results suggest that GIDL reduction of 40 % is achieved without Ge PAI and the total off-state leakage (IOFF) is reduced by ∼ 50 % with a slight reduction in drive current (ION) and similar short-channel effects as compared with the case with PAI for same process conditions, which is not reported yet. The reduction in GIDL, and hence the improvement in ION/IOFF ratio is because of elimination of end-of-range defects at the source/drain sidewall junction regions. It is also shown that a slight reduction in ION in the absence of Ge PAI is because of a small increase in the extrinsic series resistance. © 2015 IEEE.
About the journal
JournalData powered by TypesetIEEE Electron Device Letters
PublisherData powered by TypesetInstitute of Electrical and Electronics Engineers Inc.
ISSN07413106
Open AccessNo
Concepts (14)
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    Bicmos technology
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    Dielectric materials
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    Digital storage
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    Electric resistance
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    Field effect transistors
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    Silicon
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    Silicon alloys
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    Threshold voltage
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    GATE INDUCED DRAIN LEAKAGES
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    High-k metal gates
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    PRE-AMORPHIZATION IMPLANT
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    Series resistances
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    Silicon germanium
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    Germanium