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EFFECT OF DIFFERENT OXIDATION PROCESSES ON MOS C-V CHARACTERISTICS.
J. Majhi, D. Krishna Rao
Published in
1984
Volume: 22
   
Issue: 4
Pages: 218 - 221
Abstract
Four silicon samples cut from a 10 ohm-cm n-type silicon polished wafer were passivated by four different oxidation processes: thermal, TCE, anodic and dc plasma. C-V characteristics of MOS capacitors fabricated with these samples and the effect of bias temperatures stress were studied. The Si-SiO//2 interface state density and mobile charge density are found to be the lowest for samples subject to anodic oxidation and the largest for samples subject to thermal oxidation. The possible causes for the observations are discussed.
About the journal
JournalIndian Journal of Pure and Applied Physics
ISSN00195596
Open AccessNo
Concepts (4)
  •  related image
    SEMICONDUCTING SILICON - OXIDATION
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    C-V CHARACTERISTICS
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    Thermal oxidation
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    Semiconductor devices, mos