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Determination of the width of the density of states of the highest occupied molecular orbital in pentacene
Sanjoy Jena,
Published in Elsevier B.V.
2020
Volume: 695
   
Abstract
We present a simple and effective method to estimate the width (σ) of the density of states (DOS) of the Highest Occupied Molecular Orbital (HOMO) in pentacene using field effect studies. This method can be applied to most organic semiconductors where charge carrier motion is by thermally activated hopping. The charge carrier density dependent mobility acts as the probe. We show from simulations that the variation of mobility, as a function of charge carrier density, is highly sensitive to σ. Thus, σ can be found with low error using this method. We optimize the fabrication process to develop pentacene transistors with greatly diminished non-idealities. We estimate the width of the DOS of the HOMO for pentacene to be 80 ± 10 meV. The contribution of the tail states is explored and we find it to be negligible in the on-state of the transistors studied. © 2019 Elsevier B.V.
About the journal
JournalData powered by TypesetThin Solid Films
PublisherData powered by TypesetElsevier B.V.
ISSN00406090
Open AccessNo
Concepts (13)
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    Carrier concentration
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    Molecular orbitals
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    Organic field effect transistors
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    Transistors
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    Density of state
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    Fabrication process
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    HIGHEST OCCUPIED MOLECULAR ORBITAL
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    Hopping transport
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    PENTACENE TRANSISTORS
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    Pentacenes
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    Thermally activated hopping
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    WIDTH OF THE DENSITY OF STATE
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    Carrier mobility