This paper reports on design, fabrication and characterization of laterally excited thin film piezoelectric on Silicon (TPoS) MEMS resonators of resonance frequency around 1 GHz. Devices were fabricated on 5 μm SOI and 0.5 μm Aluminium Nitride piezoelectric film. We studied the effect of the number of anchors attached to the resonator and the width of the resonator on Q-factor and motional resistance. Measured characteristics of the device with Phononic crystal (PnC) tether showed a resonance peak at 969.22 MHz with motional resistance 2.9 kΩ and Q-factor of 1998. The motional resistance could be reduced to 770 Ω for wider devices. © 2017 IEEE.