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Design and fabrication of 1 GHz lateral TPoS MEMS resonator for RF front end applications
Published in Institute of Electrical and Electronics Engineers Inc.
2018
Volume: 2018-January
   
Pages: 310 - 313
Abstract
This paper reports on design, fabrication and characterization of laterally excited thin film piezoelectric on Silicon (TPoS) MEMS resonators of resonance frequency around 1 GHz. Devices were fabricated on 5 μm SOI and 0.5 μm Aluminium Nitride piezoelectric film. We studied the effect of the number of anchors attached to the resonator and the width of the resonator on Q-factor and motional resistance. Measured characteristics of the device with Phononic crystal (PnC) tether showed a resonance peak at 969.22 MHz with motional resistance 2.9 kΩ and Q-factor of 1998. The motional resistance could be reduced to 770 Ω for wider devices. © 2017 IEEE.
About the journal
JournalData powered by TypesetIEEE MTT-S International Microwave and RF Conference, IMaRC 2017
PublisherData powered by TypesetInstitute of Electrical and Electronics Engineers Inc.
Open AccessNo
Concepts (14)
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    Aluminum nitride
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    Fabrication
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    Iii-v semiconductors
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    Microelectromechanical devices
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    Phonons
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    Piezoelectricity
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    Q factor measurement
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    ANCHOR LOSS
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    LATERAL MODES
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    MEMS RESONATORS
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    MOTIONAL RESISTANCE
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    Phononic crystal
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    Q-factors
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    Resonators