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Correlated noise in bipolar transistors: Model implementation issues
Published in Elsevier Ltd
2015
Volume: 114
   
Pages: 69 - 75
Abstract
Abstract A new orthogonalization scheme is suggested for implementing correlated noise of bipolar transistors. The scheme provides a necessary condition on the non-quasi-static (NQS) models that can be used to obtain an implementation-suitable correlated noise model. One of the solutions presented here corresponds to a single node realization not reported so far. The gm-factor is introduced in the noise analysis explaining the deviations of a former noise model from device simulations. The model is extended to include the collector space-charge-region induced noise by retaining the simplicity of the realization and preserving the model parameter count. © 2015 Elsevier Ltd.
About the journal
JournalData powered by TypesetSolid-State Electronics
PublisherData powered by TypesetElsevier Ltd
ISSN00381101
Open AccessNo
Concepts (8)
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    Bipolar transistors
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    Field effect transistors
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    Compact model
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    Correlated noise
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    NON QUASI STATIC EFFECTS
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    Orthogonalization
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    VERILOG-A
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    White noise