Header menu link for other important links
X
Concentration dependence of diflfusivity in polysilicon
M. R. Murti
Published in SPIE
1992
Volume: 1523
   
Pages: 445 - 446
Abstract
Diffusion of phosphorus in polycrystalline silicon is carried out from POCl3 source at 1000°C for 1 hour. The diffusion profiles were obtained and were analysed to get diffusivity as a function of concentration. © 1992 SPIE. All rights reserved.
About the journal
JournalData powered by TypesetProceedings of SPIE - The International Society for Optical Engineering
PublisherData powered by TypesetSPIE
ISSN0277786X
Open AccessNo
Concepts (7)
  •  related image
    Chlorine compounds
  •  related image
    Integrated circuits
  •  related image
    Polycrystalline materials
  •  related image
    Polysilicon
  •  related image
    Concentration dependence
  •  related image
    DIFFUSION PROFILES
  •  related image
    Phosphorus compounds