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Concentration dependence of diflfusivity in polysilicon
M. R. Murti
Published in SPIE
1992
DOI:
10.1117/12.57028
Volume: 1523
Pages: 445 - 446
Abstract
Diffusion of phosphorus in polycrystalline silicon is carried out from POCl3 source at 1000°C for 1 hour. The diffusion profiles were obtained and were analysed to get diffusivity as a function of concentration. © 1992 SPIE. All rights reserved.
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Journal
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Proceedings of SPIE - The International Society for Optical Engineering
Publisher
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SPIE
ISSN
0277786X
Open Access
No
Concepts (7)
Chlorine compounds
Integrated circuits
Polycrystalline materials
Polysilicon
Concentration dependence
DIFFUSION PROFILES
Phosphorus compounds
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