Diffusion of phosphorus in polycrystalline silicon is carried out from POCl3 source at 1000°C for 1 hour. The diffusion profiles were obtained and were analysed to get diffusivity as a function of concentration. © 1992 SPIE. All rights reserved.

M. R. Murti

Chlorine compounds

Integrated circuits

Polycrystalline materials

Polysilicon

Concentration dependence

DIFFUSION PROFILES

Phosphorus compounds

IIT Madras is a public technical and research university located in Chennai, Tamil Nadu. Founded in 1959, it is recognised as an Institute of National Importance.

IIT Madras has been ranked as the top engineering institute in India for four years in a row by the National Institutional Ranking Framework of the MHRD

It currently offers undergraduate, postgraduate and research degrees across 16 disciplines in Engineering, Sciences, Humanities and Management. About 596 faculty belonging to science and engineering departments and centres of the Institute are engaged in teaching, research and industrial consultancy.

IIT Madras

Proceedings of SPIE - The International Society for Optical Engineering

Diffusion of radioactive phosphorus in polycrystalline silicon has been studied in the temperature range 566-980 degrees C. Diffusion profiles were obtained by anodic oxidation sectioning coupled with radio tracer detection. Diffusion coefficients in the grain boundary were obtained following Leclaire's method of analysis. An Arrhenius plot of grain boundary diffusion coefficients gave rise to an activation energy of 2.65 eV and pre-exponential factor D' 0=4.8*10-3 cm2 s-1.

Semiconductor Science and Technology

Grain boundary diffusion of phosphorus in polycrystalline silicon

physica status solidi (a)

Diffusion of donor elements (125Sb,82P,74(73)As) in polycrystalline silicon

Physics Bulletin

The white cloud and the Tungus catastrophe

Concentration dependence of diflfusivity in polysilicon

Journal	Data powered by TypesetProceedings of SPIE - The International Society for Optical Engineering
Publisher	Data powered by TypesetSPIE
ISSN	0277786X
Open Access	No