The polycrystalline sample of Ba3V2O8 was prepared by a high-temperature solid-state reaction technique. The effect of temperature on impedance parameters was studied using an impedance analyzer in a wide frequency range (102-106 Hz). The real and imaginary parts of complex impedance trace semicircles in the complex plane. The temperature-dependent plots reveal the presence of both bulk and grain boundary effects above 125°C. The bulk resistance of the material decreases with rise in temperature. This exhibits a typical negative temperature coefficient of resistance (NTCR) behavior of the material. The modulus analysis suggests a possible hopping mechanism for electrical transport processes of the material. The nature of variation of dc conductivity suggests the Arrhenius type of electrical conductivity. Copyright © 2008 Praveen Khatri et al.