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Chemical mechanical planarization of ruthenium with oxone as oxidizer
Published in
2012
Volume: 15
   
Issue: 3
Pages: H55 - H58
Abstract
Potassium peroxymonosulfate (Oxone) was investigated as an oxidizing agent in silica based slurries for chemical mechanical planarization of Ru. Upon addition of oxone, the Ru removal rate increases significantly in the pH range of 1-6. The slurry stability is poor at pH 3 and higher. At pH 2, oxone enhances the Ru removal rate even in the absence of abrasive, indicating that a soft film is formed on the Ru surface. Ru dissolution experiments show that the static etch rate is low. The Ru removal rate variation with pressure and velocity does not follow the Preston equation. © 2011 The Electrochemical Society.
About the journal
JournalElectrochemical and Solid-State Letters
ISSN10990062
Open AccessYes
Concepts (14)
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    ETCH RATES
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    Oxidizing agents
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    PH RANGE
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    POTASSIUM PEROXYMONOSULFATE
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    PRESTON EQUATIONS
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    REMOVAL RATE
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    SILICA-BASED SLURRIES
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    SLURRY STABILITY
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    SOFT FILM
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    Potassium
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    Ruthenium
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    Silica
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    Slurries
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    pH