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Characterization of copper chemical mechanical polishing (CMP) in nitric acid-hydrazine based slurry for microelectronic fabrication
Moganty Surya Sekhar,
Published in
2006
Volume: 504
   
Issue: 1-2
Pages: 227 - 230
Abstract
Chemical mechanical polishing of copper in nitric acid based slurry, with hydrazine as inhibitor was investigated. The polish rate and static etch rate decreased with the addition of hydrazine. Electrochemical corrosion studies confirm the inhibiting effect of hydrazine. The roughness of the polished copper surface improved with the addition of hydrazine. © 2005 Elsevier B.V. All rights reserved.
About the journal
JournalThin Solid Films
ISSN00406090
Open AccessNo
Concepts (9)
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    Etching
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    Hydrazine
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    Nitric acid
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    Slurries
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    Surface roughness
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    Inhibiting effect
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    POLISH RATE
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    STATIC ETCH RATE
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    CHEMICAL MECHANICAL POLISHING