The aim of this work is to develop zirconium oxynitride coatings by RF magnetron sputtering on silicon substrates. The film properties were analyzed as a function of oxygen flux percentage in two different inert gas atmospheres namely argon and helium. At low oxygen flux percentage, Zr2ON 2 and ZrO2 phases are observed from the structural characterization by X-ray diffraction. The atomic ratio of nonmetallic to metallic atoms (N + O)/Zr content varies from 1.22 to 2.03 for zirconium oxynitride films deposited in argon atmosphere and from 1.43 to 2.33 for films deposited in helium atmosphere. The thickness of the film was measured by surface profiler and the growth rate decreases from 11.33 to 5.1 nm/min for films deposited in argon atmosphere and from 7.01 to 3.75 nm/min for films deposited in helium atmosphere with increase in oxygen flux percentage. The films deposited are hydrophobic and the contact angle was measured by contact angle measuring system. Higher surface roughness and maximum contact angle values of 100° and 103° are observed for films deposited in argon and helium atmosphere respectively at low oxygen flux percentage (2.5%). The surface energy of films was calculated by two methods: Owens-Wendt's geometric mean and Wu's harmonic mean approach. The elevated surface energy values were observed with increase in oxygen flux percentage. The stress measurements of the deposited films were done by sin2ψ X-ray diffraction method which depends on the variation of Zr2ON2 and m-ZrO2 phases. © 2011 Elsevier B.V.