Profiles
Research Units
Publications
Sign Up
Faculty Login
X
Articles
Characteristics of n-CuInSe2/Au Schottky diodes
D. Krishna Rao
,
D. Sridevi
,
J. Majhi
,
Jandhyala Sobhanadri
Published in
1985
DOI:
10.1016/0038-1101(85)90050-4
Volume: 28
Issue: 12
Pages: 1251 - 1254
Abstract
The n-CuInSe2/Au point-contact Schottky diode was studied using current-voltage and capacitance-voltage measurements. Various important physical parameters of these diodes were derived from both measurements, and these values are comparable with the results reported on planar Schottky diodes. © 1985.
Topics:
Schottky barrier
(75)%
75% related to the paper
,
Metal–semiconductor junction
(74)%
74% related to the paper
,
Schottky diode
(72)%
72% related to the paper
and
Diode
(60)%
60% related to the paper
View more info for "
Characteristics of n-CuInSe2/Au Schottky diodes
"
Request full-text
Cite
Content may be subject to copyright.
Citations (1)
References (19)
Related Papers (3)
Journal Details
Concepts (4)
Related Papers (3)
Articles
Open Access
Extraction of the built-in potential for organic solar cells from current-voltage characteristics
2018 | Institute of Electrical and Electronics Engineers Inc.
Download
PDF
Preprint
Articles
Reactive ion etching of GaN in SF6 + Ar and SF6 + N2 plasma
2008
Articles
High pressure oxidation of Si(100) for production of ultrathin oxide metal-insulator-semiconductor diodes
1988
About the journal
Journal
Solid State Electronics
ISSN
00381101
Open Access
No
Concepts (4)
SEMICONDUCTOR DEVICES, SCHOTTKY BARRIER - ELECTRIC PROPERTIES
PLANAR SCHOTTKY DIODES
Schottky diodes
Semiconductor diodes
Get all the updates for this publication
Follow