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Characteristics of n-CuInSe2/Au Schottky diodes
D. Krishna Rao, D. Sridevi, J. Majhi, Jandhyala Sobhanadri
Published in
1985
Volume: 28
   
Issue: 12
Pages: 1251 - 1254
Abstract
The n-CuInSe2/Au point-contact Schottky diode was studied using current-voltage and capacitance-voltage measurements. Various important physical parameters of these diodes were derived from both measurements, and these values are comparable with the results reported on planar Schottky diodes. © 1985.
About the journal
JournalSolid State Electronics
ISSN00381101
Open AccessNo
Concepts (4)
  •  related image
    SEMICONDUCTOR DEVICES, SCHOTTKY BARRIER - ELECTRIC PROPERTIES
  •  related image
    PLANAR SCHOTTKY DIODES
  •  related image
    Schottky diodes
  •  related image
    Semiconductor diodes