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Analytical expressions for subthreshold charges and currents in thin-film soi MOSFETs
C. Mallikarjun
Published in
1991
Volume: 27
   
Issue: 5
Pages: 431 - 433
Abstract
Analytical expressions for the front and back channel charges and currents in thin-film SOI MOSFETs operating in the subthreshold region are presented, based on a charge sheet model. The analysis includes the charge coupling between the front and back gates and the effect of interface states. © 1991, The Institution of Electrical Engineers. All rights reserved.
About the journal
JournalElectronics Letters
ISSN00135194
Open AccessNo
Concepts (3)
  •  related image
    Semiconducting films
  •  related image
    SOI MOSFET
  •  related image
    SEMICONDUCTOR DEVICES, MOSFET