Header menu link for other important links
X
Abrasive and additive interactions in high selectivity STI CMP slurries
B. V.S. Praveen,
Published in
2014
Volume: 114
   
Pages: 98 - 104
Abstract
Ceria based slurries with additives are widely used in shallow trench isolation (STI) chemical mechanical planarization (CMP) process to obtain high selective removal of silicon dioxide over silicon nitride. In this study ceria from different sources were used as abrasives and l-proline and l-glutamic acid were used as additives, with a focus on identifying the interactions between abrasives and additives and their effect of selectivity. Ceria particles were characterized using X-ray diffraction (XRD), energy dispersive X-ray (EDX) spectroscopy, transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) while the additive abrasive interactions were evaluated by UV-Visible spectroscopy and inductively coupled plasma optical emission spectroscopy (ICP-OES) analysis. While slurries with l-proline yielded high selectivity only with certain type of ceria, slurries with l-glutamic acid were found to be less sensitive to the ceria source than those with l-proline, and yielded high selectivity regardless of the source of ceria used. The purity of the abrasive and its crystal structure appear to play a significant role in determining the selectivity. © 2013 Elsevier B.V. All rights reserved.
About the journal
JournalMicroelectronic Engineering
ISSN01679317
Open AccessNo
Concepts (22)
  •  related image
    CHEMICAL-MECHANICAL PLANARIZATION PROCESS
  •  related image
    CMP
  •  related image
    Energy dispersive x-ray
  •  related image
    High selectivity
  •  related image
    INDUCTIVELY COUPLED PLASMA-OPTICAL EMISSION SPECTROSCOPY
  •  related image
    Selective removal
  •  related image
    SHALLOW TRENCH ISOLATION
  •  related image
    Uv visible spectroscopy
  •  related image
    Abrasives
  •  related image
    Additives
  •  related image
    Amino acids
  •  related image
    CERIUM COMPOUNDS
  •  related image
    CHEMICAL MECHANICAL POLISHING
  •  related image
    Emission spectroscopy
  •  related image
    Inductively coupled plasma
  •  related image
    Photoelectrons
  •  related image
    Silicon nitride
  •  related image
    Transmission electron microscopy
  •  related image
    Ultraviolet visible spectroscopy
  •  related image
    X ray diffraction
  •  related image
    X ray photoelectron spectroscopy
  •  related image
    Semiconducting silicon