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A model for the high field leakage current in nitrided oxides
D. Mahaveer Sathaiya,
Published in
2007
Volume: 101
   
Issue: 10
Abstract
The enhanced conduction at low fields (<4 MVcm) in metal-insulator semiconductor structures having nitrided oxides was recently explained using a generalized thermionic trap-assisted tunneling model. In the present work, we show that the same model can predict both high and low field leakage currents if we assume that a fraction (∼35%) of the insulator thickness located next to the metal-insulator junction is devoid of traps. © 2007 American Institute of Physics.
About the journal
JournalJournal of Applied Physics
ISSN00218979
Open AccessNo
Concepts (9)
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    Electron traps
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    Electron tunneling
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    Leakage currents
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    Mathematical models
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    Metal insulator boundaries
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    INSULATOR THICKNESS
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    METAL INSULATOR JUNCTION
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    Nitrided oxides
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    Oxides