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A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications
, , Kwon U., Moumen N., Stoker M.W., Harley E.C.T., Bedell S., Greene B., Henson W., Chowdhury M.Show More
Published in IEEE
2011
Abstract
Band-gap engineering using SiGe channels to reduce the threshold voltage (V TH) in p-channel MOSFETs has enabled a simplified gate-first high-κ/metal gate (HKMG) CMOS integration flow. Integrating Silicon-Germanium channels (cSiGe) on silicon wafers for SOC applications has unique challenges like the oxidation rate differential with silicon, defectivity and interface state density in the unoptimized state, and concerns with T inv scalability. In overcoming these challenges, we show that we can leverage the superior mobility, low threshold voltage and NBTI of cSiGe channels in high-performance (HP) and low power (LP) HKMG CMOS logic MOSFETs with multiple oxides utilizing dual channels for nFET and pFET. © 2011 IEEE.
About the journal
JournalData powered by TypesetTechnical Digest - International Electron Devices Meeting, IEDM
PublisherData powered by TypesetIEEE
ISSN01631918
Open AccessNo
Authors (4)