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A Compact Model of Drain Current for GaN HEMTs Based on 2-DEG Charge Linearization
Published in Institute of Electrical and Electronics Engineers Inc.
2016
Volume: 63
   
Issue: 11
Pages: 4226 - 4232
Abstract
A physics-based simple and accurate compact model of drain current for GaN-based high electron mobility transistors (HEMTs) is presented. The model is developed using analytical relations for charges in the 2-D electron gas and barrier layer. For the first time, a simple charge linearization approach has been used for GaN-based HEMTs. The access regions are accurately modeled using transistors. The model is rigorously validated over a wide range of geometries and parameters for AlGaN/GaN and AlInN/GaN HEMTs. The model also passes the DC Gummel symmetry test. © 1963-2012 IEEE.
About the journal
JournalData powered by TypesetIEEE Transactions on Electron Devices
PublisherData powered by TypesetInstitute of Electrical and Electronics Engineers Inc.
ISSN00189383
Open AccessNo
Concepts (20)
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    Aluminum alloys
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    Drain current
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    Electron gas
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    Electron mobility
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    Electrons
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    Field effect transistors
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    Gallium alloys
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    Gallium nitride
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    Indium alloys
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    Linearization
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    SEMICONDUCTING ALUMINUM COMPOUNDS
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    SPICE
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    2-D ELECTRON GAS
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    Algan/gan
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    ALINN/GAN
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    CHARGE-BASED
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    Compact model
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    GAN HIGH ELECTRONMOBILITY TRANSISTOR (HEMT)
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    Spice modeling
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    High electron mobility transistors